advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 40v simple drive requirement r ds(on) 7m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice AP9468GH/j rohs-compliant product parameter rating drain-source voltage 40 gate-source voltage 20 continuous drain current 3 75 0.7 storage temperature range operating junction temperature range continuous drain current 57 pulsed drain current 1 300 -55 to 150 -55 to 150 89 total power dissipation thermal data parameter linear derating factor 200810232 1 g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9468gj) are available for low-profile applications. g d s to-251(j) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =250ua - 0.01 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 7 m ? ? ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 AP9468GH/j 0 40 80 120 160 200 240 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 5.0v 4.5 v v g =3.0v 0 40 80 120 160 200 240 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5 v v g = 3.0 v 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4.0 5.0 6.0 7.0 8.0 020406080 i d , drain current (a) r ds(on) (m ?
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP9468GH/j 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =20v v ds =25v v ds =30v 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 40 80 120 160 200 240 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9468gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only e3 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 symbols advanced power electronics corp. millimeters 9468gj ywwsss part numbe r package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only
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